NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 68

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NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND08GW3B2CN6E
Manufacturer:
CYPRESS
Quantity:
1 003
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
0
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
NAND08GW3B2CN6E
Quantity:
200
Package mechanical
Figure 45. ULGA52 12 x 17 x 0.65 mm, 1 mm pitch, package outline
1. Drawing is not to scale.
Table 33.
68/72
Symbol
FD1
eE1
FE1
ddd
D1
D2
FD
FE
A2
E1
E2
b1
b2
A
D
E
e
ULGA52 12 x 17 x 0.65 mm, 1 mm pitch, package mechanical data
E
E2
FE1
FE
E1
A
12.00
10.00
17.00
12.00
13.00
0.70
1.00
6.00
1.00
2.00
3.00
1.00
2.50
2.00
Typ
Millimeters
e
11.90
16.90
0.65
0.95
Min
D2
D1
D
b1
b2
FD
12.10
17.10
Max
0.65
0.65
0.75
1.05
0.10
FD1
BALL "A1"
eE1
e
A2
0.028
0.039
0.472
0.236
0.394
0.669
0.472
0.512
0.039
0.079
0.118
0.039
0.098
0.079
Typ
NAND04G-B2D, NAND08G-BxC
Inches
0.026
0.037
0.468
0.665
Min
LGA-ME
ddd
0.026
0.026
0.029
0.041
0.476
0.004
0.673
Max

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