NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 50

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NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

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Maximum ratings
11
50/72
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 25.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
Table 25: Absolute maximum ratings
NAND04G-B2D, NAND08G-BxC
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
4.6
4.6
may
Unit
°C
°C
V
V

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