BSP76E6327NT Infineon Technologies, BSP76E6327NT Datasheet

BSP76E6327NT

Manufacturer Part Number
BSP76E6327NT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP76E6327NT

Switch Type
Low Side
Power Switch Family
BSP76
Input Voltage
-0.2 to 10V
Power Switch On Resistance
190mOhm
Output Current
1.4A
Number Of Outputs
Single
Mounting
Surface Mount
Package Type
SOT-223
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
3 +Tab
Power Dissipation
3.8W
Lead Free Status / RoHS Status
Not Compliant
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
Complete product spectrum and additional information http://www.infineon.com/hitfet
Smart Lowside Power Switch
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
auto restart
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
â
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Page 1
Short circuit
Protection
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
HITFET
Source
Ò
Drain
II.Generation BSP 76
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
DS
DS(on)
AS
4
2004-03-05
200
150
1.4
1
42
M
2
VPS05163
V
mW
A
mJ
3

Related parts for BSP76E6327NT

BSP76E6327NT Summary of contents

Page 1

... Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò ...

Page 2

Maximum Ratings 25°C, unless otherwise specified j Parameter Drain source voltage Supply voltage for full short circuit protection 1) Continuous input voltage 2) Continuous input current -0.2V £ V £ 10V IN V < -0. ...

Page 3

... Nominal load current < 150° Current limit (active if V >2 Device switched on into existing short circuit (see diagram Determination of I and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by R Symbol V DS(AZ) I DSS = IN(th) I IN(on) R ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Turn-on time Turn-off time ...

Page 5

Block diagram Terms HITFET Input circuit (ESD protection) Input Inductive and overvoltage output clamp Short circuit behaviour Gate Drive Source/ Ground Page ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =72 K/W tot A thJA max 6cm2 1 0 -75 -50 -25 0 ...

Page 7

Typ. transfer characteristics I =f =12V Jstart Typ. output characteristics I =f =25° ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 12 A -40°C 25°C 8 85°C 6 150° 0 Determination of I D(lim ...

Page 9

Package Ordering Code SOT-223 Q67060-S7201-A2 6.5 ±0 ±0 +0.2 acc. to DIN 6784 2.3 0.7 ±0.1 4.6 0. 1.6 ±0.1 0.1 max 0. GPS05560 Page 9 BSP 76 2004-03-05 ...

Page 10

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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