BSM10GP120 Infineon Technologies, BSM10GP120 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSM10GP120
Manufacturer Part Number
BSM10GP120
Description
IGBT Modules 1200V 10A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM10GP120.pdf
(12 pages)
Specifications of BSM10GP120
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.4 V
Continuous Collector Current At 25 C
20 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
100 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM10GP120
Manufacturer:
EUPEC
Quantity:
25
Company:
Part Number:
BSM10GP120
Manufacturer:
EUPEC
Quantity:
300
Part Number:
BSM10GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM10GP120
Quantity:
50
Company:
Part Number:
BSM10GP120-B9
Manufacturer:
ST
Quantity:
726
Company:
Part Number:
BSM10GP120DN2E
Manufacturer:
EUPEC
Quantity:
726
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
100
100
T
V
V
I
V
V
I
V
V
I
V
V
V
V
V
f = 1MHz, T
V
V
V
V
T
T
T
T
T
R
BSM10GP120
F
F
F
C
vj
vj
C
C
C
GE
GE
=I
GE
GE
=I
GE
GE
=I
GE
GE
GE
GE
CE
CE
GE
GE
CE
2
= 25°C
= 25°C,
= 125°C,
= 25°C
= 100°C, R
= 25°C
= R
Nenn
Nenn
Nenn
= 0V, T
= 0V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V, T
= 0V, T
= 0V, V
1
,
,
,
GE
exp [B(1/T
,
GE
vj
vj
vj
vj
vj
T
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
100
= 20V, T
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
vj
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
3(11)
= 0 V
= 25°C,
= 493
2
- 1/T
- di
- di
- di
vj
1
= 25°C
)]
F
F
F
I
I
/dt =
/dt =
/dt =
CE
CE
I
I
F
F
I
R
R
R
R
R
R
I
I
C
C
C
F
F
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
10 A
10 A
400A/µs
600 V
600 V
400A/µs
600 V
600 V
400A/µs
600 V
600 V
10,0 A
10,0 A
0,35mA
1200 V
1200 V
10,0 A
10,0 A
R
V
V
B
L
CC’+EE’
E
GE(TO)
C
I
I
R
P
I
CE sat
V
CES
GES
V
R/R
Q
25/50
RM
RQ
ies
25
25
CE
F
F
r
min.
min.
min.
min.
min.
4,5
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3375
typ.
typ.
typ.
typ.
typ.
0,84
0,54
2,75
2,2
2,1
1,5
0,3
2,4
5,5
0,6
0,5
0,8
2,2
2,1
11
11
13
5
-
-
max.
max.
max.
max.
max.
2,55
2,85
2,55
100
500
300
6,5
20
5
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-9.xls
mWs
mWs
µAs
µAs
mW
m
mA
nH
k
nF
µA
nA
%
V
V
A
A
V
V
V
V
V
K