CNY171SR2M Fairchild Semiconductor, CNY171SR2M Datasheet - Page 3

• Manufacturer Part Number: CNY171SR2M
• Description: Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of CNY171SR2M

• Input Type: DC
• Output Type: DC
• Output Device: Transistor With Base
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP W SMD
• Isolation Voltage: 5250Vrms
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Current Transfer Ratio: 80%
• Fall Time: 20000ns
• Rise Time: 4000ns
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Maximum Fall Time: 20 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 4 us
• Lead Free Status / RoHS Status: Compliant

©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
Electrical Characteristics
Individual Component Characteristics
Isolation Characteristics
Transfer Characteristics
*All typicals at T
Symbol
EMITTER
DETECTOR
Symbol
COUPLED
Symbol
(CTR)
V
BV
BV
BV
CE(sat)
I
I
C
C
C
V
R
C
CEO
CBO
V
C
I
CEO
CBO
ECO
CE
CB
R
EB
ISO
ISO
ISO
F
J
(2)
Output Collector
Current
Collector-Emitter
Saturation Voltage
Input Forward Voltage
Capacitance
Reverse Leakage
Current
Breakdown Voltage
Leakage Current
Capacitance
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Collector to Emitter
Collector to Base
Emitter to Collector
Collector to Emitter
Collector to Base
Collector to Emitter
Collector to Base
Emitter to Base
A
Parameters
= 25°C
Characteristic
DC Characteristics
(T
MOC8106M
MOC8107M
CNY17F1M
CNY17F2M
CNY17F3M
CNY17F4M
CNY171M
CNY172M
CNY173M
CNY174M
CNY17XM/FXM
MOC8106M/7M
A
= 25°C Unless otherwise specified.)
I
I
V
V
I
I
I
V
V
V
V
V
(T
F
F
C
C
E
F
R
CE
CB
CE
CB
EB
Test Conditions
= 60mA
= 10mA
A
= 100µA, I
= 1.0mA, I
= 10µA, I
= 0 V, f = 1.0MHz
= 6V
= 25°C Unless otherwise specified.)
= 0, f = 1MHz
= 10 V, I
= 10 V, I
= 0, f = 1MHz
= 0, f = 1MHz
f = 60 Hz, t = 1 sec.,
I
V
V
I-O
I-O
I-O
F
F
F
F
F
= 0
Test Conditions
= 500 VDC
= Ø, f = 1MHz
= 0
= 0
= 0
= 0
2µA
I
I
I
I
F
F
C
C
(4)
= 10mA, V
= 10mA, V
= 2.5mA, I
= 500µA, I
3
(4)
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
Test Conditions
(4)
CE
CE
MOC810XM
F
F
CNY17FXM
CNY17XM,
= 10mA
= 5.0mA
Device
(3)
= 10V
= 5V
All
All
All
All
All
All
Min.
7500
(1)
10
11
Min.
Typ.*
1.0
1.0
70
70
0.2
7
Min. Typ.* Max. Units
100
100
160
100
160
50
40
63
40
63
0.001
Typ.
1.35
1.15
100
120
18
10
20
10
1
8
Max.
Max.
1.65
1.50
10
50
20
www.fairchildsemi.com
150
300
125
200
320
125
200
320
0.4
80
80
Vac(pk)
Units
pF
Units
pF
µA
nA
nA
pF
pF
pF
V
V
%
V