IP4051CX11/LF,135 NXP Semiconductors, IP4051CX11/LF,135 Datasheet - Page 12

• Manufacturer Part Number: IP4051CX11/LF,135
• Description: IC EMI FILTER MMC ESD PROT 11CSP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of IP4051CX11/LF,135

• Capacitance: 25pF
• Package / Case: 11-CSP
• Resistance (ohms): 47, 13K, 56K
• Resistance In Ohms: 47, 13K, 56K
• Channels: 4 Channels
• Termination Style: SMD/SMT
• Tolerance: -
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Tolerance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: /T3 934057926135 IP4051CX11/LF

NXP Semiconductors
4. SD-memory card and MMC interface comparison
5. Passive ESD protection and EMI filter devices
AN10911_1
Application note
A short summary of the main electrical interface parameters of the SD-memory card
versus the MMC are listed in the following table:
Table 8.
NXP Semiconductors offers a wide range of devices for the interface conditioning of the
SD-memory card and/or MMC interface. The product range covers basic EMI filters and
ESD protection devices (IP4252CZ12-6 or IP4252CZ16-8) up to a fully integrated
interface device containing voltage translators, LDO, EMI filtering, high-level ESD
protection, and all required biasing/pull-up/pull-down resistors integrated into a single
monolithic IP4853CX24/LF.
Besides the SD-memory card or MMC interface mode, these devices can be used for e.g.
Serial Peripheral Interface (SPI)-based interface operation modes, too. In this case,
4-channel devices can be used although this is not the preferred method of data
exchange with SD-memory cards due to the lower speed and only single bit access.
A basic overview is given in
chapters.
Passive filter devices are available in leadless plastic packages (DFN) and Wafer Level
Chip Size Packages (WLCSP) while the solutions incorporating active devices are
available in WLCSP only.
Symbol
V
f
t
C
C
R
R
R
L
PP
rise/fall
ch
sd/MMC
L
CARD
CMD
DAT7(3)-0
intDAT3
SD-memory card vs. MMC main electrical parameters
Parameter
memory card supply voltage
high-voltage range
low-voltage range
operating clock frequency
high-speed mode clock rise time/fall time
total bus capacitance for each signal line
single card signal line capacitance
C
C
C
CMD pull-up resistor value
external Data7(3) - Data0 pull-up resistor
value MMC (SD) to prevent bus floating
(except eMMC)
eMMC internal Data7- Data0 pull-up resistor
value (eMMC only)
DAT3/CD (SD)
maximum signal line capacitance
MICRO
MOBILE
BGA
All information provided in this document is subject to legal disclaimers.
; MMC only
; MMC only
; MMC only
Rev. 01 — 29 April 2010
Table 9
SD(HC)-memory card and MMC interface conditioning
and a detailed description is given in the next
SD-memory
card
2.7 - 3.6
-
50
3
40
10
-
-
-
10 - 100
10 - 100
-
10 - 90
16
(MAX)
(MAX)
(MAX)
(MAX)
(MAX)
MMC
2.7 - 3.6
1.7 - 1.95
52
3
30
-
12
18
12
4.7 - 100
50 - 100
50 - 150
-
16
(MAX)
(MAX)
(MAX)
(MAX)
(MAX)
(MAX)
(MAX)
AN10911
© NXP B.V. 2010. All rights reserved.
Unit
V
V
MHz
ns
pF
pF
pF
pF
pF
kΩ
kΩ
kΩ
kΩ
nH
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