IP4051CX11/LF,135 NXP Semiconductors, IP4051CX11/LF,135 Datasheet - Page 4

• Manufacturer Part Number: IP4051CX11/LF,135
• Description: IC EMI FILTER MMC ESD PROT 11CSP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of IP4051CX11/LF,135

• Capacitance: 25pF
• Package / Case: 11-CSP
• Resistance (ohms): 47, 13K, 56K
• Resistance In Ohms: 47, 13K, 56K
• Channels: 4 Channels
• Termination Style: SMD/SMT
• Tolerance: -
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Tolerance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: /T3 934057926135 IP4051CX11/LF

NXP Semiconductors
2. SD-memory card electrical interface
AN10911_1
Application note
2.1 Bus operation conditions
Today, most appliances use the (2.7 V to 3.6 V) operating mode. This enables the use of a
fixed voltage interface and power supply to reduce cost and complexity of the control
circuitry.
All further descriptions are related to this “high-voltage range” 2.7 V to 3.6 V supply
voltage operated interfaces.
A list of SD-memory card threshold levels for the high-voltage range is listed in
The minimum output level of the driving device and the receiving device input level are
specified in
To decouple the SD-memory card interface specification from the signal-conditioning
device (EMI filter, ESD protection, etc.), an intermediate signal threshold is specified in
Table
for an SD-memory card compliant interface conditioning device.
As ESD protection and EMI filter devices should be placed as close as possible to the
contacts of the protected interface and integrate a major portion of the total bus
capacitance C
be, for the majority of the voltage drop.
Subsequently, the high-level and the low-level output voltages of the filter or conditioning
device can be reduced (refer to V
levels specified in
Table 1
A detailed graphical overview of the different threshold levels at different positions of the
signal path is depicted in
ending with the receiving side on the right side of the drawing.
The three different threshold levels are shown in relation to each other in
comparing the SD-memory card output, the NXP signal-conditioning device output and
the SD-memory card input threshold levels.
Table 1.
Values taken from
Symbol
V
V
V
•
SD
OH
OL
Voltage level translation to enable the use of low-voltage host processors to
communicate with 2.7 V to 3.6 V compliant SD-memory card devices
2. This “EMI filter, card interface side” leveling is taken as a minimum requirement
for values specified in
SD-memory card threshold level for high-voltage range
Parameter
SD-memory card supply
voltage
high-level output voltage I
low-level output voltage
Table 1
BUS
All information provided in this document is subject to legal disclaimers.
Ref. 1
, they are expected to be responsible, as any other filter device would
Ref. 1
(taken from
Rev. 01 — 29 April 2010
and still exceed the input voltage level requirements (refer to
Figure
Ref.
SD(HC)-memory card and MMC interface conditioning
Ref.
1, starting with the driver output on the left side and
OH
1) (see also
Condition
V
I
V
, V
OH
OL
1).
SD
SD
OL
= 100 μA;
= −100 μA;
= 2.7 V
= 2.7 V
in
Table
Table note 1
2) compared to the output threshold
Min
2.7
0.75*V
-
and
SD
2 on page
Max
3.6
-
0.125*V
AN10911
© NXP B.V. 2010. All rights reserved.
Figure
5).
SD
Table
2,
Unit
V
V
V
4 of 37
1.