FJP9100TUNL Fairchild Semiconductor, FJP9100TUNL Datasheet

FJP9100TUNL

Manufacturer Part Number
FJP9100TUNL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJP9100TUNL

Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
275V
Collector-base Voltage(max)
600V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
6@5mA@2AV
Collector-emitter Saturation Voltage
1.5@5mA@2AV
Collector Current (dc) (max)
4A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / Rohs Status
Compliant
©2003 Fairchild Semiconductor Corporation
High Voltage Power Darlington Transistor
• Built-in Resistor at Base-Emitter : R
• Built-in Resistor at Base : R
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW=300 s, duty Cycle=2% Pulsed
V
V
C
I
I
h
V
V
V
I
I
I
P
T
T
BV
BV
BV
BV
Symbol
CBO
EBO
C
CP
B
CE
BE
ob
FE
J
STG
CBO
CEO
EBO
C
Symbol
CBO
CER
CEO
EBO
(sat)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Parameter
B
Parameter
(Typ.)=700
1
C
(Typ.)=2000
=25 C)
T
C
=25 C unless otherwise noted
100
T
C
=25 C unless otherwise noted
FJP9100
- 55 ~ 150
I
I
I
I
V
V
V
V
I
I
V
C
C
C
E
C
C
Value
CB
EB
CE
CE
CB
600
275
150
0.5
= 1.5A, I
= 500 A, I
= 500 A, I
= 1mA, R
= 2A, I
= 2A, I
10
40
4
6
= 10V, I
= 600V, I
= 5V, I
= 5V, I
= 10V, I
Test Condition
B
B
B
= 5mA
= 5mA
C
C
BE
C
= 50mA, L=25mH
E
= 0.5A
= 3A
E
C
E
Units
= 0
= 0, f=1MHz
= 0
= 0
= 330
= 0
W
V
V
V
A
A
A
C
C
B
1.Base
1
R
1000
1000
Min.
600
600
275
B
10
R 1 2000
R B 700
Equivalent Circuit
2.Collector
R
Typ.
110
1
TO-220
Max.
5000
0.1
0.1
1.5
6.0
3.Emitter
C
E
Rev. A, May 2003
Units
mA
mA
pF
V
V
V
V
V
V

Related parts for FJP9100TUNL

FJP9100TUNL Summary of contents

Page 1

... I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE C Output Capacitance ob ©2003 Fairchild Semiconductor Corporation FJP9100 (Typ.)=2000 1 100 T =25 C unless otherwise noted C Value Units 600 V 275 0.5 ...

Page 2

... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characterstic 100 I = 400 0.1 0 [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10k 1k 100 -50 - C], ABBIENT TEMPERATURE A Figure 5. R & R vs. Ambient Temperature B 1 ©2003 Fairchild Semiconductor Corporation 10k I = 1.4mA 125 0.6mA 0.4mA B 100 0.1 100 125 0 ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2003 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A, May 2003 ...

Page 4

... Package Dimensions 1.27 2.54TYP [2.54 ©2003 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, May 2003 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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