KSP13BUNL Fairchild Semiconductor, KSP13BUNL Datasheet

KSP13BUNL

Manufacturer Part Number
KSP13BUNL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSP13BUNL

Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
30V
Emitter-base Voltage (max)
10V
Collector-emitter Saturation Voltage
1.5@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Compliant
©2002 Fairchild Semiconductor Corporation
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
I
I
h
V
V
f
C
CBO
EBO
T
Symbol
FE
J
STG
CBO
CES
EBO
C
CE
BE
CES
Symbol
(on)
(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CES
Parameter
C
=30V
(max)=625mW
: KSP13
: KSP14
: KSP13
: KSP14
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSP13/14
I
V
V
V
V
I
V
V
f=100MHz
C
C
CB
EB
CE
CE
CE
CE
=100 A, I
=100mA, I
=10V, I
=30V, I
=5V, I
=5V, I
=5V, I
=5V, I
Test Condition
C
C
C
C
C
E
=10mA
=100mA
=100mA
=10mA
B
=0
=0
B
=0
=0.1mA
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
500
625
150
30
30
10
Min.
10K
10K
20K
125
5K
30
TO-92
Max.
100
100
1.5
2.0
Rev. A2, September 2002
Units
mW
mA
V
V
V
C
C
Units
MHz
nA
nA
V
V
V

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KSP13BUNL Summary of contents

Page 1

... EBO Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSP13/14 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =30V, I ...

Page 2

... I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 100 10 1 0.0 0.4 0.8 1.2 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 0.1 100 1000 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1.6 2.0 2.4 1 Figure 4. Current Gain Bandwidth Product ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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