BSP51E6327XT Infineon Technologies, BSP51E6327XT Datasheet - Page 2

• Manufacturer Part Number: BSP51E6327XT
• Manufacturer: Infineon Technologies

Specifications of BSP51E6327XT

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-emitter cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CE
EB
= 100 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 1 A, I
= 500 mA, I
= 1 mA, I
= 4 V, I
= V
CE0max
B
B
= 1 mA
C
B
B
B
C
= 1 A
E
E
E
= 0
B
B
= 0 , BSP50
= 0 , BSP51
= 0 , BSP52
CE
CE
= 0 , BSP50
= 0 , BSP51
= 0 , BSP52
= 0
2)
, V
= 0.5 mA
= 0.5 mA
thJA
= 10 V
= 10 V
BE
please refer to Application Note Thermal Resistance
= 0
1)
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CES
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
1000
2000
min.
45
60
80
60
80
90
5
-
-
-
-
-
-
Values
Value
typ.
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSP50-BSP52
max.
1.3
1.8
1.9
2.2
10
10
2007-03-30
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
µA
-
V