BD680ASNL Fairchild Semiconductor, BD680ASNL Datasheet
BD680ASNL
Manufacturer Part Number
BD680ASNL
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.BD680ASNL.pdf
(4 pages)
Specifications of BD680ASNL
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2.8@40mA@2AV
Collector Current (dc) (max)
4A
Dc Current Gain
750@2A@3V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-126
Lead Free Status / Rohs Status
Compliant
©2002 Fairchild Semiconductor Corporation
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW=300 s, duty Cycle=1.5% Pulse
R
V
V
I
I
I
V
P
T
T
V
I
I
I
h
V
V
C
CP
B
CBO
CEO
EBO
CEO
EBO
J
STG
FE
CBO
C
Symbol
CEO
CE
BE
ja
Symbol
(on)
(sat)
(sus)
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage : BD676A/678A/680A
Collector Cut-off Current : BD676A
Emitter Cut-off Current
Thermal Resistance (Junction to Ambient)
Collector-Base Voltage
Collector-Emitter Voltage : BD676A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
BD676A/678A/680A/682
T
: BD676A
C
: BD676A
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
C
: BD682
: BD676A/678A/680A
: BD682
: BD682
=25 C)
: BD676A/678A/680A
=25 C unless otherwise noted
: BD676A
T
C
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
=25 C unless otherwise noted
Parameter
I
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
C
C
C
CB
CB
CB
CB
CE
CE
CE
CE
EB
CE
CE
CE
CE
= - 50mA, I
= - 2A, I
= - 1.5A, I
Test Condition
= - 5V, I
= - 45V, I
= - 60V, I
= - 80V, I
= - 100V, V
= - 45V, V
= - 60V, V
= - 80V, V
= - 100V, V
= - 3V, I
= - 3V, I
= - 3V, I
= - 3V, I
B
= - 40mA
C
B
C
C
C
C
B
E
E
E
= 0
= - 2A
= - 1.5A
= - 30mA
= - 2A
= - 1.5A
BE
BE
BE
= 0
= 0
= 0
= 0
BE
BE
1
1. Emitter
= 0
= 0
= 0
= 0
= 0
- 100
Min.
750
- 45
- 60
- 80
750
- 65 ~ 150
2.Collector
Value
- 100
- 100
- 100
- 45
- 60
- 80
- 45
- 60
- 80
150
- 5
- 4
- 6
14
88
Typ.
TO-126
Max.
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
- 2.8
- 2.5
- 2.5
- 2.5
3.Base
Rev. B, September 2002
- 2
Units
C/W
mA
W
V
V
V
V
V
V
V
V
V
A
A
C
C
Units
mA
V
V
V
V
A
A
A
A
A
A
A
A
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BD680ASNL Summary of contents
Page 1
... CEO I Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter On Voltage : BD676A/678A/680A BE * Pulse Test: PW=300 s, duty Cycle=1.5% Pulse ©2002 Fairchild Semiconductor Corporation BD676A/678A/680A/682 T =25 C unless otherwise noted C Parameter : BD676A : BD678A : BD680A : BD682 : BD678A : BD680A : BD682 = =25 C unless otherwise noted ...
Page 2
... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation V = -3V -2.4 CE -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -10 -0.1 Figure 2. Collector-Emitter Saturation Voltage -0.1 -1 -1.2 -1.4 -1.6 -1.8 -2.0 ...
Page 3
... Package Dimensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2002 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. B, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...