NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 32

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Software algorithms
7.6
7.6.1
7.6.2
32/53
An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for
more details.
Hardware simulation models
Behavioral simulation models
Denali software corporation models are platform independent functional models designed to
assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND flash devices, and so allow
software to be developed before hardware.
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers
and electrical characteristics of flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
NAND512xxA2D, NAND01GxxA2C