NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 47

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

NAND512xxA2D, NAND01GxxA2C
Figure 33. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
10.2
Figure 34. Data protection
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
below
V DD
DD
WP
(Figure
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in the figure
Nominal Range
range from V
34).
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
DC and AC parameters
Ai13188
LKO
threshold.
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