BFY181 (H) Infineon Technologies, BFY181 (H) Datasheet - Page 2

• Manufacturer Part Number: BFY181 (H)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY181 (H)

• Lead Free Status / Rohs Status: No
• Other names: BFY181HNH

Maximum Ratings
Thermal Resistance
Notes.:
1) The maximum permissible base current for V
measurement duration < 1s)
2) At T
3) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
IFAG IMM RPD D HIR
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter base cuttoff current
V
Emitter base cuttoff current
V
S
CB
CE
CB
EB
EB
A
S
 137°C
=25°C; unless otherwise specified
= 20 V, I
= 12 V, I
= 10 V, I
= 2 V, I
= 1 V, I
is measured on the collector lead at the soldering point to the pcb.
S
= + 137 °C. For T
C
C
E
B
E
= 0
= 0
2), 3)
= 0
= 0,1µA
= 0
3)
1.)
S
> + 137 °C derating is required.
CE0
BE
=0
> 12V
Symbol
I
I
I
I
I
Symbol
V
V
V
V
I
I
P
T
T
T
R
CBO
CEX
CBO
EBO
EBO
C
B
CEO
CES
CBO
EBO
tot
j
op
stg
th JS
2 of 4
FBE
measurements is 15mA (spot-
min.
-
-
-
-
-
Values
12
20
20
2
20
2
175
200
-65...+200
-65...+200
< 360
1)
Values
typ.
-
-
-
-
-
max.
100
100
50
25
0.5
V 2, February 2011
Unit
µA
µA
nA
A
A
BFY181
Unit
V
V
V
V
mA
mA
mW
C
C
C
K/W