BFY196 (P) Infineon Technologies, BFY196 (P) Datasheet - Page 3
BFY196 (P)
Manufacturer Part Number
BFY196 (P)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BFY196_S.pdf
(4 pages)
Specifications of BFY196 (P)
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
6500 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
100 mA
Power Dissipation
700 mW
Maximum Operating Temperature
+ 200 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
50 at 50 mA at 8 V
Gain Bandwidth Product Ft
6.5 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
12.0 V
Ic(max)
100.0 mA
Ptot (max)
700.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY196PNZ
Electrical Characteristics (continued)
Notes.:
1)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Base-Emitter forward voltage
I
DC current gain
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
Output Power
I
P
E
C
C
C
C
C
C
S
S
S
CB
CE
EB
IN
= 70 mA, V
= 50 mA, I
= 50 mA, V
= 70 mA, V
= 20 mA, V
= 70 mA, V
= 80 mA, V
= Z
=15 dBm, Z
= Z
= Z
G
= 10 V, V
= 10 V, V
= 0.5V, V
ma
L
Sopt
Sopt
= 50
, Z
S
S
12
21
L
C
= Z
CE
BE
BE
CB
CE
CE
CE
CE
CE
= 0
S
(
k
= 5 V, f = 2 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= vcb = 0, f = 1 MHz
= 8 V
= 5 V, f = 500 MHz
= 5 V, f = 2 GHz,
= 5V, f = 2 GHz
= 5 V, f = 2 GHz ,
= Z
Lopt
L
k
= 50
2
1
)
,
G
ms
S
S
12
21
Symbol
V
h
f
C
C
C
F
Gma
|S
P
T
FE
FBE
OUT
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
-
50
6
-
-
-
-
10
4
18.5
Values
typ.
-
100
6.5
1
0.44
3,6
3
11
5
19.5
max.
1
175
-
1.3
-
4,3
3.5
-
-
-
V2, February 2011
Unit
V
-
GHz
pF
pF
pF
dB
dB
dB
dBm
BFY196