NS7520B-1-C36 Digi International, NS7520B-1-C36 Datasheet - Page 14

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NS7520B-1-C36

Manufacturer Part Number
NS7520B-1-C36
Description
IC ARM MICROPROCESSOR 177BGA
Manufacturer
Digi International
Series
NET+ARM®r
Datasheets

Specifications of NS7520B-1-C36

Applications
Network Processor
Core Processor
ARM7
Program Memory Type
External Program Memory
Controller Series
-
Ram Size
External
Interface
EBI/EMI, Ethernet, DMA, SPI, UART
Number Of I /o
16
Voltage - Supply
1.4 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
177-LFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Manufacturer
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Part Number:
NS7520B-1-C36
Manufacturer:
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Quantity:
10 000
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Chip select controller
The NS7520 supports five unique chip select configurations.
Chip select controller signal descriptions
1 0
CS4_
CS3_
CS2_
CS1_
CS0_
CAS3_
CAS2_
CAS1_
CAS0_
WE_
OE_
CS0_
CS1_
CS2_
CS3_
CS4_
CAS0_
CAS1_
CAS2_
CAS3_
WE_
OE_
C h i p s e l e c t c o n t r o l l e r
Symbol
Mnemonic
Chip select 0
Chip select 1
Chip select 2
Chip select 3
Chip select 4
Column address
strobe signals
Write enable
Output enable
Signal
B4
A4
C5
B5
A1
C4
B3
A2
C6
B6
D5
Pin
N S 7 5 2 0 D a t a s h e e t
O
O
O
O
O
O
O
O
O
O
O
I/O
Unique chip select outputs supported by the NS7520. Each chip select
can be configured to decode a portion of the available address space
and can address a maximum of 256 Mbytes of address space. The
chip selects are configured using registers in the memory module.
A chip select signal is driven low to indicate the end of the current
memory cycle. For FP/EDO DRAM, these signals provide the RAS
signal.
Activated when an address is decoded by a chip select module
configured for DRAM mode. The CAS_ signals are active low and
provide the column address strobe function for DRAM devices.
The CAS_ signals also identify which 8-bit bytes of the 32-bit data bus
are active during any given system bus memory cycle.
For SDRAM, CAS[3:1]_ provides the SDRAM command field. CAS0_
provides the auto-precharge signal.
For non-DRAM settings, these signals are 1.
Active low signal that indicates that a memory write cycle is in
progress. This signal is activated only during write cycles to
peripherals controlled by one of the chip selects in the memory
module.
Active low signal that indicates that a memory read cycle is in
progress. This signal is activated only during read cycles from
peripherals controlled by one of the chip selects in the memory
module.
Description
4
4
4
4
4
4
4
4
4
4
4
OD
Chip select/DRAM RAS_
Chip select/DRAM RAS_
Chip select/DRAM RAS_
Chip select/DRAM RAS_
Chip select (boot select)
FP/EDO DRAM column strobe D31:D24/SDRAM RAS_
FP/EDO DRAM column strobe D23:D16/SDRAM CAS_
FP/EDO DRAM column strobe D15:D08/SDRAM WE_
FP/EDO DRAM column strobe D07:D00/SDRAM A10(AP)
Write enable for NCC Ctrl’d cycles
Output enable for NCC Ctrl’d cycles
Description
0 3 / 2 0 0 6

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