MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 53

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 27:
Figure 28:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
t AONPD
Begin point: Rising edge of CK - CK#
with ODT first registered HIGH
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL
t
t
AONPD and
ADC Definition
V
RTT
End point:
Extrapolated
point at V
V
_
SS
NOM
t
Q
AOFPD Definition
RTT
_
NOM
CNW
T
SW
t AONPD
t ADC
1
T
End point: Extrapolated point at V
SW
T
SW
2
V
T
21
CK
CK#
SW
SW
1
11
Begin point: Rising edge of CK - CK# defined by
the end point of ODTL
V
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered LOW
SW
1
V
SW
2
53
V
V
SW
RTT
2
_
WR
V
SW
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CWN
SS
2
Q
4 or ODTL
End point: Extrapolated point at V
t ADC
V
SW
1Gb: x4, x8, x16 DDR3 SDRAM
T
SW
CWN
1
t AOFPD
12
T
End point: Extrapolated point at V
T
8
SW
SW
T
2
22
SW
1
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
V
V
RTT
RTT
_
_
NOM
NOM
RTT
V
V
V
DD
DD
SS
_
WR
Q/2
Q
Q/2
V
RTT
SS
Q
_
NOM