MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 60

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 31: Differential Output Signal
Reference Output Load
Figure 32: Reference Output Load for AC Timing and Output Slew Rate
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
X
Figure 32 on page 60 represents the effective reference load of 25Ω used in defining the
relevant device AC timing parameters (except ODT reference timing) as well as the
output slew rate measurements. It is not intended to be a precise representation of a
particular system environment or a depiction of the actual load presented by a produc-
tion tester. System designers should use IBIS or other simulation tools to correlate the
timing reference load to a system environment.
DUT
X
ZQ
DQS#
DQS
V
DQ
REF
V
DD
RZQ = 240Ω
Q/2
Timing reference point
R
TT
= 25Ω
Output Characteristics and Operating Conditions
X
60
V
V
TT
SS
= V
DD
Q/2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR3 SDRAM
X
©2006 Micron Technology, Inc. All rights reserved.
V
V
V
MAX output
V
MIN output
OX
OX
OL
OH
(
(
(
(
DIFF
AC
AC
DIFF
) MAX
) MIN
)
)