MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 55

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 35:
34Ω Driver
Table 36:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
MR1[5,1]
MR1[5,1]
Pull-up/pull-down mismatch (MM
0,1
0, 1
34Ω Driver Impedance Characteristics
34Ω Driver Pull-Up and Pull-Down Impedance Calculations
34.3Ω
RZQ/7 = (240Ω ±1 percent)/7
R
34.3Ω
ON
R
Notes:
RZQ = 240Ω ±1 percent
ON
1. Tolerance limits assume RZQ of 240Ω (±1 percent) and are applicable after proper ZQ cali-
2. Measurement definition for mismatch between pull-up and pull-down (MM
The 34Ω driver’s current range has been calculated and summarized in Table 37 on
page 56 for V
V
defined as follows:
• R
• R
R
DD
Resistor
ON
Ron
R
bration has been performed at a stable temperature and voltage (V
Refer to "34W Driver Output Sensitivity" on page 56 if either the temperature or the volt-
age changes after calibration.
both R
ON 34PU
ON 34PD
ON 34PU
Resistor
= 1.425V. The individual pull-up and pull-down resistors (R
R
R
34PD
ON 34PD
ON 34PU
PUPD
MM
ON PU
)
= (V
= (V
PUPD
DD
and R
OUT
DD
= 1.5V, Table 38 on page 56 for V
0.2/V
0.5/V
0.8/V
0.2/V
0.5/V
0.8/V
0.5/V
=
Q - V
V
)/|I
ON PD
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
OUT
DD
DD
DD
DD
DD
DD
DD
R
------------------------------------
V
OUT
ON
OUT
OUT
Q
Q
Q
Q
Q
Q
Q
at 0.5 × V
R
DD
DD
DD
DD
DD
DD
PU
ON
|; R
)/|I
Q
Q
Q
Q
Q
Q
–
N
ON 34PU
55
OUT
R
OM
–10%
Min
ON
0.6
0.9
0.9
0.9
0.9
0.6
DD
|; R
Q:
PD
237.6
is turned off
ON 34PD
Min
Min
33.9
20.4
30.5
30.5
30.5
30.5
20.4
X
Micron Technology, Inc., reserves the right to change products or specifications without notice.
100
is turned off
Nom
n/a
1.0
1.0
1.0
1.0
1.0
1.0
DD
1Gb: x4, x8, x16 DDR3 SDRAM
= 1.575V, and Table 39 on page 56 for
Nom
Nom
34.3
34.3
34.3
34.3
34.3
34.3
34.3
240
Output Driver Impedance
Max
1.1
1.1
1.4
1.4
1.1
1.1
10
©2006 Micron Technology, Inc. All rights reserved.
ON 34PD
DD
242.4
Max
Max
34.6
38.1
38.1
48.5
48.5
38.1
38.1
Q = V
and R
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
Units
%
DD
PUPD
, V
ON 34PU
). Measure
SS
Units
Units
Q = V
Notes
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
1, 2
) are
1
1
1
1
1
1
SS
).