AD8112-EVALZ Analog Devices Inc, AD8112-EVALZ Datasheet - Page 7

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AD8112-EVALZ

Manufacturer Part Number
AD8112-EVALZ
Description
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD8112-EVALZ

Lead Free Status / Rohs Status
Compliant
ABSOLUTE MAXIMUM RATINGS
Table 6.
Parameter
Analog Supply Voltage (AV
Digital Supply Voltage (DV
Ground Potential Difference (AGND to DGND)
Internal Power Dissipation
Analog Input Voltage
Digital Input Voltage
Output Voltage (Disabled Output)
Output Short-Circuit Duration
Storage Temperature Range
Lead Temperature (Soldering 10 sec)
1
2
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Specification is for device in free air (T
100-lead plastic LQFP (ST): θ
voltage (1/2 V
differential. See Output Voltage Swing specification for linear output range.
To avoid differential input breakdown, ensure that one-half the output
OUT
) and any input voltage is less than 10 V of the potential
2
JA
CC
1
CC
= 40°C/W.
to DGND)
to AV
A
EE
= 25°C):
)
Rating
26.0 V
6 V
±0.5 V
3.1 W
Maintain linear output
(AV
(AV
Momentary
300°C
DV
−65°C to +125°C
CC
CC
EE
+ 1.5 V)
− 1.5 V) to
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POWER DISSIPATION
The AD8112 is operated with ±5 V to ±12 V supplies and can
drive loads down to 150 Ω (±5 V) or 600 Ω (±12 V), resulting
in a large range of possible power dissipations. For this reason,
extra care must be taken when derating the operating conditions
based on ambient temperature.
Packaged in a 100-lead LQFP, the AD8112 junction-to-ambient
thermal impedance (θ
the maximum allowed junction temperature of the plastic encap-
sulated die should not exceed 150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due
to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure. The curve in Figure 4 shows
the range of allowed power dissipations that meet these conditions
over the commercial range of ambient temperatures.
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
4.0
3.5
3.0
2.5
2.0
0
10
JA
AMBIENT TEMPERATURE (°C)
20
) is 40°C/W. For long-term reliability,
30
40
50
T
J
= 150°C
60
AD8112
70