PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet
PSMN011-30YL,115
Manufacturer Part Number
PSMN011-30YL,115
Description
MOSFET Power N-Ch 30V Trench MOS logic level FET
Manufacturer
NXP Semiconductors
Specifications of PSMN011-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
36 A
Power Dissipation
49 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
5 ns
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
8 ns
Lead Free Status / Rohs Status
Details
Other names
934064949115
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state resistance V
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 24 October 2011
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
DC-to-DC converters
Load switching
Conditions
25 °C ≤ T
T
T
see
V
see
V
Figure
V
Figure
mb
mb
GS
GS
GS
GS
Figure 12
Figure 12
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 4.5 V; I
14; see
14; see
j
≤ 175 °C
D
D
D
D
GS
= 10 A; T
Figure 15
Figure 15
= 10 A; V
= 10 A; V
= 10 A; T
Figure 2
= 10 V; see
j
DS
DS
j
= 25 °C;
= 25 °C;
= 15 V; see
= 15 V; see
Figure 1
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
Synchronous buck regulator
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
12.3
9.9
1.4
4.9
175
Max
30
37
29
14.5
11.6
-
-
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
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