PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
PSMN011-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S)
10
D
10
10
10
10
10
g
50
40
30
20
10
fs
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
10
Min
1
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
20
Typ
Max
2
30
V
All information provided in this document is subject to legal disclaimers.
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GS
I
D
(V)
(A)
40
Rev. 3 — 24 October 2011
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
50
40
30
20
10
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
PSMN011-30YLC
T
j
= 150 ° C
I
D
=5mA
60
2
1mA
T
120
j
3
= 25 ° C
© NXP B.V. 2011. All rights reserved.
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V
T
GS
j
( ° C)
(V)
180
4
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