PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
Table 6.
PSMN011-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
40
30
20
10
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
10
Characteristics
4.5
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
3.5
1
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
2
…continued
3
V
GS
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4
003aag219
(V) = 3.0
V
DS
(V)
2.4
2.2
2.8
2.6
Conditions
V
T
I
see
I
V
V
dI
see
S
S
j
GS
GS
GS
S
Rev. 3 — 24 October 2011
= 25 °C
= 10 A; V
= 10 A; dI
5
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 10 A;
= 0 V; T
= 15 V; f = 1 MHz;
= 15 V
Fig 7.
R
(m Ω )
DSon
DS
40
30
20
10
j
0
= 15 V;
= 25 °C;
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
4
PSMN011-30YLC
8
Min
-
-
-
-
-
-
12
Typ
3.8
0.85
17
7
10
7
© NXP B.V. 2011. All rights reserved.
16
003aag220
V
GS
Max
-
1.1
-
-
-
-
(V)
20
Unit
nC
V
ns
nC
ns
ns
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