PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN011-30YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN011-30YLC
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to drain
Package
Name
LFPAK; Power-SO8
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
All information provided in this document is subject to legal disclaimers.
plastic single-ended surface-mounted package; 4 leads
Description
Rev. 3 — 24 October 2011
V
pulsed; t
T
MM (JEDEC JESD22-A115)
pulsed; t
Conditions
25 °C ≤ T
25 °C ≤ T
V
see
T
V
V
see
mb
mb
GS
GS
GS
sup
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
Simplified outline
SOT669 (LFPAK; Power-SO8)
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 25 °C; see
= 100 °C; see
= 50 Ω; unclamped;
Figure 2
= 25 °C; I
1 2 3 4
mb
mb
GS
mb
= 25 °C;
= 25 °C
= 20 kΩ
D
= 37 A;
Figure 1
Figure 1
PSMN011-30YLC
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
140
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
SOT669
175
175
-
Version
Max
30
30
20
37
26
150
29
260
26
150
9
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
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