PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
PSMN011-30YLC
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
-1
1
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
10
(A)
I
D
0
V
All information provided in this document is subject to legal disclaimers.
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DS
C
C
C
(V)
rss
iss
oss
10
Rev. 3 — 24 October 2011
2
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
S
50
40
30
20
10
t
0
b
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
0.3
PSMN011-30YLC
T
j
= 150 ° C
0.6
0.9
T
© NXP B.V. 2011. All rights reserved.
j
003aag229
V
= 25 ° C
SD
(V)
1.2
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