BAS16J NXP Semiconductors, BAS16J Datasheet - Page 18

58T1329

BAS16J

Manufacturer Part Number
BAS16J
Description
58T1329
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS16J

Diode Type
Ultra Fast Recovery
Forward Current If(av)
250mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Rohs Compliant
Yes

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NXP Semiconductors
12. Revision history
Table 10.
BAS16_SER_5
Product data sheet
Document ID
BAS16_SER_5
Modifications:
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
Revision history
Release date
20080825
20011010
20050415
20070308
20030623
19980120
20070420
19990506
20040204
19980831
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5 “Marking
Table 6 “Limiting
V
Table 6 “Limiting
V
Table 8
Table 8
and T
Table 8
Section 13 “Legal
RRM
R
maximum value from 75 V to 100 V
j
maximum value from 85 V to 100 V
= 25 C
“Characteristics”: change of I
“Characteristics”: change of I
“Characteristics”: change of I
Data sheet status
Product data sheet
Product specification
Product data sheet
Product data sheet
Product specification
Product specification
Product data sheet
Product specification
Product specification
Product specification
values”: for BAS16, BAS16T, BAS16W and BAS516 change of
values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
Rev. 05 — 25 August 2008
codes”: marking code amended for BAS16W
information”: updated
R
R
R
condition V
maximum value from 1.0 A to 0.5 A for V
condition V
Change notice
-
-
-
-
-
-
-
-
-
-
R
R
from 75 V to 80 V for T
from 75 V to 80 V for T
High-speed switching diodes
BAS16 series
Supersedes
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
BAS16_3
-
-
-
-
BAS16VV_BAS16VY_2
BAS16W_3
BAS316_3
-
© NXP B.V. 2008. All rights reserved.
j
j
= 25 C
= 150 C
R
= 80 V
18 of 20

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