BAS16J NXP Semiconductors, BAS16J Datasheet - Page 8

• Manufacturer Part Number: BAS16J
• Description: 58T1329
• Manufacturer: NXP Semiconductors

Specifications of BAS16J

• Diode Type: Ultra Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Rohs Compliant: Yes

NXP Semiconductors
8. Test information
9. Package outline
BAS16_SER_5
Product data sheet
Fig 5.
Fig 6.
Fig 7.
2.5
2.1
Dimensions in mm
(1) I
R
V = V
S
1.4
1.2
R
S
= 50
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time t
Forward recovery voltage test circuit and waveforms
Package outline BAS16 (SOT23/TO-236AB)
R
R
= 50
I
= 1 mA
I
F
1
R
S
1 k
D.U.T.
3.0
2.8
1.9
3
450
I
F
r
D.U.T.
= 0.35 ns
OSCILLOSCOPE
R
2
i
0.48
0.38
= 50
0.45
0.15
OSCILLOSCOPE
r
r
mga881
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
SAMPLING
R
i
= 50
Rev. 05 — 25 August 2008
1.1
0.9
0.15
0.09
04-11-04
I
V
R
10 %
t
r
Fig 8.
t
10 %
r
90 %
Dimensions in mm
input signal
90 %
input signal
3.6
3.4
t
p
Package outline BAS16H (SOD123F)
t
p
2.7
2.5
p
p
= 100 ns; duty cycle
100 ns; duty cycle
0.70
0.55
1.7
1.5
t
High-speed switching diodes
t
BAS16 series
1
2
V
I
F
V FR
0.55
0.35
output signal
= 0.05
output signal
0.005
© NXP B.V. 2008. All rights reserved.
t rr
1.2
1.0
0.25
0.10
mga882
(1)
04-11-29
t
t
8 of 20