BAS16J NXP Semiconductors, BAS16J Datasheet - Page 4

• Manufacturer Part Number: BAS16J
• Description: 58T1329
• Manufacturer: NXP Semiconductors

Specifications of BAS16J

• Diode Type: Ultra Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Rohs Compliant: Yes

NXP Semiconductors
5. Limiting values
BAS16_SER_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
V
I
I
I
P
F
FRM
FSM
RRM
R
tot
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
BAS16
BAS16H
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS16J
BAS316
BAS516
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
Rev. 05 — 25 August 2008
Conditions
t
square wave
T
T
T
T
T
T
T
T
T
T
p
amb
amb
amb
amb
sp
amb
sp
amb
sp
sp
t
t
t
p
p
p
0.25
0.5 s;
= 1 s
= 1 ms
= 1 s
90 C
85 C
90 C
90 C
25 C
25 C
25 C
25 C
25 C
25 C
[1][3]
[2][5]
[5][6]
[5][6]
[2][5]
[1][3]
[5][8]
[1][3]
[1][6]
[1][5]
High-speed switching diodes
[1]
[2]
[1]
[1]
[1]
[4]
[1]
[6]
[7]
[7]
[6]
[1]
[8]
[1]
[6]
BAS16 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
100
100
215
215
155
200
175
250
500
4
1
0.5
250
380
830
550
250
170
180
250
200
400
500
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
A
A
A
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
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