BAS16J NXP Semiconductors, BAS16J Datasheet - Page 6
![58T1329](/photos/40/35/403528/ge2sod323f-40_sml.jpg)
BAS16J
Manufacturer Part Number
BAS16J
Description
58T1329
Manufacturer
NXP Semiconductors
Datasheet
1.BAS16J115.pdf
(20 pages)
Specifications of BAS16J
Diode Type
Ultra Fast Recovery
Forward Current If(av)
250mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS16J
Manufacturer:
NXP
Quantity:
30 000
Company:
Part Number:
BAS16J
Manufacturer:
NXP
Quantity:
49 856
Part Number:
BAS16J
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAS16J+115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAS16J,115
Manufacturer:
NXP
Quantity:
49 856
Part Number:
BAS16J,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
7. Characteristics
BAS16_SER_5
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Table 8.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 60 m copper strip line.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Single diode loaded.
Soldering point of cathode tab.
Soldering points at pins 4, 5 and 6.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Thermal characteristics
Characteristics
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
Parameter
thermal resistance from
junction to solder point
p
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
300 s;
F
F
Rev. 05 — 25 August 2008
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
…continued
Conditions
I
I
I
I
V
V
V
V
f = 1 MHz; V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
Conditions
L
= 100 ; measured at I
j
j
R
= 150 C
= 150 C
= 0 V
[5][7]
High-speed switching diodes
[6]
[6]
[6]
[6]
[1]
[2]
[3]
BAS16 series
Min
-
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
70
55
350
260
150
120
Max
715
855
1
1.25
30
0.5
30
50
1.5
1
4
1.75
2
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
pF
pF
ns
V
6 of 20
A
A
A