TPC8009H Toshiba, TPC8009H Datasheet
TPC8009H
Specifications of TPC8009H
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TPC8009H Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Thermal Characteristics Characteristic Thermal resistance, channel to ambient ( Thermal resistance, channel to ambient ( Marking (Note 5) TPC8009 Part No. (or abbreviation code) H Lot No. A line indicates lead (Pb)-free package or ...
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Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
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I – Common source 25°C Pulse test 2 2 0.2 0.4 0.6 0.8 Drain-source voltage V ( – V ...
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R – (ON 13、6.5、3 4 13、6.5、3 Common source 2 Pulse test 0 −80 − ...
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Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 10 1 0.1 0.001 0.01 Safe Operating Area 100 I D max (pulse ms ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...