TPC8009H Toshiba, TPC8009H Datasheet - Page 6

• Manufacturer Part Number: TPC8009H
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8009H

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.01Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 13A
• Power Dissipation: 1.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

0.01
100
0.1
10
0.01
1
*: Single – pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Ta = 25°C
Drain-source voltage V
0.1
1000
Safe Operating Area
100
0.1
10
0.001
1
(1) Device mounted on a glass-epoxy board
(2) Device mounted on a glass-epoxy board
(a) (Note 2a)
(b) (Note 2b)
1
10 ms*
0.01
V DSS max
DS
10
(V)
t =1 ms*
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(s)
10
100
Single pulse
(2)
(1)
1000
TPC8009-H
2006-11-16