TPC8009H Toshiba, TPC8009H Datasheet - Page 4

• Manufacturer Part Number: TPC8009H
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8009H

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.01Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 13A
• Power Dissipation: 1.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

100
0.1
10
50
40
30
20
10
10
8
6
4
2
0
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
4
1
0.2
Drain-source voltage V
Gate-source voltage V
3
Drain current I
100
2.9
2
1
0.4
Ta = −55°C
I
I
|Y
D
D
fs
– V
– V
100
| – I
3
Ta = −55°C
DS
GS
D
0.6
25
D
Common source
Ta = 25°C Pulse test
25
10
GS
4
DS
(A)
Common source
V DS = 10 V
Pulse test
V GS = 2.4 V
(V)
(V)
0.8
2.5
2.8
2.7
2.6
5
100
1.0
6
4
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
1
0
1
0.1
0
0
10
3.5
2
4
0.4
Drain-source voltage V
Gate-source voltage V
I D = 13 A
4
Drain current I
1
6.5
R
6
V GS = 4.5 V
0.8
V
DS (ON)
I
DS
D
3.1
10
– V
– V
8
DS
GS
– I
1.2
D
10
Common source
Ta = 25°C Pulse test
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.5 V
12
(V)
(V)
1.6
TPC8009-H
2.9
2.8
2.5
2.7
3
14
2006-11-16
100
2.0
16