AM29LV800DT-70EC AMD (ADVANCED MICRO DEVICES), AM29LV800DT-70EC Datasheet - Page 15

• Manufacturer Part Number: AM29LV800DT-70EC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29LV800DT-70EC

• Lead Free Status / Rohs Status: Not Compliant

7.3
7.4
7.5
7.6
February 27, 2009 S29AL008D_00_A11
Writing Commands/Command Sequences
Program and Erase Operation Status
Standby Mode
Automatic Sleep Mode
See
for timing specifications and to
on page 33
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. Refer to
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
Byte Program Command Sequence on page 22
both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 7.3 on page 17
address bits required to uniquely select a sector. The
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the
Autoselect Command Sequence on page 22
I
Characteristics on page 36
During an erase or program operation, the system may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and I
Operation Status on page 27
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at V
(Note that this is a more restricted voltage range than V
V
standard access time (t
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
In
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. I
Characteristics on page 33
CC2
CC
DC Characteristics on page
Reading Array Data on page 21
± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires
in
DC Characteristics on page 33
represents the active current specification for reading array data.
Word/Byte Configuration on page 14
indicate the address space that each sector occupies. A sector address consists of the
CE
D a t a
) for read access when the device is in either of these standby modes, before it is
contains timing specification tables and timing diagrams for write operations.
represents the automatic sleep mode current specification.
for more information, and to
33, I
Figure 15.1 on page 36
S h e e t
CC3
for more information. Refer to
represents the active current specification for the write mode. The
and I
S29AL008D
CC4
for more information.
ACC
contains details on programming data to the device using
represents the standby current specification.
+ 30 ns. The automatic sleep mode is independent of the
for more information.
Command Definitions on page 21
IH
for the timing diagram. I
.) If CE# and RESET# are held at V
AC Characteristics on page 36
CC
IL
read specifications apply. Refer to
, and OE# to V
Table 15.1, Read Operations on page 36
Autoselect Mode on page 18
IH
CC1
Table 7.2 on page 16
.
in
DC Characteristics
contains details on
for timing diagrams.
CC5
IH
, but not within
in
CC
DC
Write
± 0.3 V.
and
Word/
and
AC
15