LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 16

• Manufacturer Part Number: LH28F008SAT-12
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAT-12

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

LH28F008SA
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
During Read ......................................... 0°C to +70°C
During Block Erase/Byte Write ............... 0°C to +70°C
Temperature Under Bias ..................... -10°C to +80°C
Storage Temperature ......................... -65°C to +125°C
Voltage on Any Pin (except V
V
V
Output Short Circuit Current .......................... 100 mA
OPERATING CONDITIONS
NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is -0.5 V on input/output pins. During transitions, this level may undershoot to -2.0 V for periods < 20 ns.
3. Maximum DC voltage on V
4. Output shorted for no more than one second. No more than one output shorted at a time.
5. 5% V
DC CHARACTERISTICS
16
SYMBOL
SYMBOL
PP
CC
with Respect to GND ..................... -2.0 V to +7.0 V
Block Erase/Byte Write .............-2.0 V to +14.0 V
to GND ........................................... -2.0 V to +7.0 V
Maximum DC voltage on input/output pins is V
LH28F008SA-85 in its Standard configuration, and the LH28F008SA-12.
I
I
I
V
V
CCS
CCD
CCR
I
T
Program Voltage with Respect to GND during
I
LO
Supply Voltage with Respect
CC
CC
LI
A
CC
specification reference the LH28F008SA-85 in its High Speed configuration, 10% V
Input Load Current
Output Leakage Current
V
V
Current
V
Operating Temperature
V
V
CC
CC
CC
CC
CC
Standby Current
Deep Power Down
Read Current
Supply Voltage (10%)
Supply Voltage (5%)
PARAMETER
PARAMETER
PP
may overshoot to +14.0 V for periods < 20 ns.
CC
and V
TYP.
0.20
1.0
PP
30
20
25
)
MIN.
4.50
4.75
CC
0
+ 0.5 V which, during transitions, may overshoot to V
MIN.
MAX.
70.0
5.50
5.25
2, 3
MAX.
±10.0
100.0
±1.0
35.0
50.0
2.0
1.2
1
2
2
4
UNITS
*
lute Maximum Ratings” may cause permanent dam-
age. These are stress ratings only. Operation beyond
the “Operating Conditions” is not recommended and
extended exposure beyond the “Operating Conditions”
may affect device reliability.
UNITS
WARNING: Stressing the device beyond the “Abso-
mA
mA
mA
µA
µA
µA
µA
°C
V
V
V
CE
PWD = GND ±0.2
I
V
f = 8 MHz, I
CMOS Inputs
V
f = 8 MHz, I
TTL Inputs
V
V
V
OUT
CC
CC
CC
CC
CC
CC
NOTE
»
= PWD = Vcc ±0.2 V
= V
= V
= V
= V
= V
= V
5
5
(RY
CC
CC
CC
CC
CC
CC
»
/ BY
TEST CONDITIONS
CC
MAX., V
MAX., V
MAX., CE
MAX.,
MAX., CE
MAX., CE
OUT
OUT
»
) = 0 mA
specifications reference the
= 0 mA
= 0 mA
8M (1M × 8) Flash Memory
OUT
IN
CC
»
»
»
= V
= PWD = V
= GND
= V
+ 2.0 V for periods < 20 ns.
= V
CC
IL
CC
or GND
or GND
IH
NOTE
1, 3
1
1
1
1