LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 22

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LH28F008SAT-12

Manufacturer Part Number
LH28F008SAT-12
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008SAT-12

Cell Type
NOR
Density
8Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant
LH28F008SA
BLOCK ERASE AND BYTE WRITE PERFORMANCE
NOTES:
1. 25°C, 12.0 V
2. Excludes System-Level Overhead.
22
Block Erase Time
Block Write Time
PARAMETER
ADDRESSES (A)
DATA (D/Q)
RY/BY (R)
PWD (P)
WE (W)
V
OE (G)
CE (E)
PP
PP
(V)
.
AND STANDBY
V
V
POWER-UP
V
V
PPH
V
V
V
V
V
V
PPL
V
V
V
V
V
V
V
V
OH
OL
TYP.
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
V
1.6
0.6
CC
LH28F008SA-85
HIGH-Z
1
t
PHWL
MIN.
ERASE SETUP
WRITE BYTE
COMMAND
t
WRITE OR
ELWL
t
Figure 9. AC Waveform for Write Operations
WLWH
A
t
AVAV
IN
MAX.
D
2.1
10
IN
t
WHEH
t
DVWH
t
WHWL
t
WHDX
TYP.
ADDRESS AND DATA
1.6
0.6
(BYTE WRITE) OR
ERASE CONFIRM
t
AVWH
LH28F008SA-12
WRITE VALID
COMMAND
t
1
VPWH
A
D
IN
IN
MIN.
t
WHAX
t
WHRL
MAX.
2.1
10
AUTOMATED
BYTE WRITE
OR ERASE
t
DELAY
WHQV1, 2
t
WHGL
UNIT
s
s
REGISTER DATA
READ STATUS
NOTE
2
2
t
VALID
QVVL
SRD
8M (1M × 8) Flash Memory
ARRAY COMMAND
WRITE READ
D
IN
28F008SA-13

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