NDS332P_NL Fairchild Semiconductor, NDS332P_NL Datasheet
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NDS332P_NL
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... THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA R Thermal Resistance, Junction-to-Case JC © 1997 Fairchild Semiconductor Corporation Features - Very low level gate drive requirements allowing direct operation in 3V circuits. V Proprietary package design using copper lead frame for high-side superior thermal and electrical capabilities. ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Current Gate - Body Leakage GSS I Current Gate - Body Leakage GSS ON ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Source Current S Drain-Source Diode Forward Voltage V SD Notes the sum of the junction-to-case and case-to-ambient ...
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Typical Electrical Characteristics -2 -4.5V GS -2.5 -3.5 -3.0 -2.7 -2 -2.0 -1 -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -1A D 1.6 V ...
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Typical Electrical Characteristics 1. -250µA D 1.08 1.04 1 0.96 0.92 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with . Temperature 500 300 200 100 ...
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Typical Electrical Characteristics -55° -0 DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature 1 0.8 0 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...