TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 38

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Intel
7.4
38
V
V
V
V
V
V
V
V
V
NOTES:
1. Erase and Program are inhibited when V
2. Applying V
Sym
IL
IH
OL
OH
PPLK
PP1
PP2
LKO
LKO2
2500 cycles on the parameter blocks. V
Table 12. DC Voltage Characteristics
£
Advanced+ Boot Block Flash Memory (C3)
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
V
Out Voltage
V
Program /
Erase
Operations
V
Erase
Lock
Voltage
V
Erase
Lock
Voltage
Parameter
PP
PP
CC
CCQ
PP
Lock-
during
Prog/
Prog/
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and
DC Voltage Characteristics
V
Note
V
1,2
CCQ
1
1
CC
–0.1V
V
–0.4
1.65
11.4
Min
–0.1
2.0
1.5
1.2
CCQ
2.7 V–3.6 V
2.7 V–3.6 V
PP
V
0.22 V
+0.3V
PP
V
Max
12.6
CC
0.1
1.0
3.6
CCQ
may be connected to 12 V for a total of 80 hours maximum.
< V
*
PPLK
V
V
and not guaranteed outside the valid V
CCQ
CCQ
0.4V
0.1V
–0.4
1.65
11.4
Min
-0.1
1.5
1.2
2.7 V–2.85 V
1.65 V–2.5 V
–
–
+0.3V
V
Max
12.6
0.4
0.1
1.0
3.6
CCQ
V
V
CCQ
CCQ
–0.4
0.4V
0.1V
1.65
11.4
Min
-0.1
1.5
1.2
2.7 V–3.3 V
1.8 V–2.5 V
–
–
+0.3V
V
Max
12.6
0.4
0.1
1.0
3.6
CCQ
PP
ranges of V
Unit
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
Complete Write
Protection
PP1
OL
OH
Test Conditions
CC
CCQ
CC
CCQ
= 100 A
= –100 A
and V
= V
= V
= V
= V
Datasheet
CC
CC
CCQ
CCQ
PP2
Min
Min
Min
Min
.