TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 42

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Intel
42
Table 16. Read Operations — 64 Mbit Density
Figure 8. Read Operation Waveform
£
Advanced+ Boot Block Flash Memory (C3)
NOTES:
R10
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
3. See
4. See
Address [A]
R1
R2
R3
R4
R5
R6
R7
R8
R9
Data [D/Q]
#
RST# [P]
maximum allowable input slew rate.
WE# [W]
OE# [G]
CE# [E]
Figure 8, “Read Operation Waveform” on page
Figure 11, “AC Input/Output Reference Waveform” on page 49
t
t
t
t
t
t
t
t
t
Sym
GLQV
PHQV
GLQX
EHQZ
GHQZ
AVQV
ELQV
ELQX
AVAV
t
OH
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from Address, CE#, or OE#
Change, Whichever Occurs First
Parameter
ELQV–
R6
t
GLQV
R5
R2
R3
after the falling edge of CE# without impact on t
R7
Product
R4
Density
42.
V
CC
R1
R1
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
for timing measurements and
2.7 V–3.6 V
Min
70
0
0
0
70 ns
Max
150
70
70
20
20
20
64 Mbit
2.7 V–3.6 V
Min
80
0
0
0
ELQV
80 ns
.
Max
150
80
80
20
20
20
R8
Datasheet
R10
R9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns