TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 7

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

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Datasheet
Introduction
Document Purpose
This datasheet contains the specifications for the Intel
(C3) device family. These flash memories add features such as instant block locking and protection
registers that can be used to enhance the security of systems.
Nomenclature
0x
0b
Byte
Word
Kword
Mword
Kb
KB
Mb
MB
APS
CUI
OTP
PR
PRD
PLR
RFU
SR
SRD
WSM
Conventions
The terms pin and signal are often used interchangeably to refer to the external signal connections
on the package. (ball is the term used for CSP).
Group Membership Brackets: Square brackets will be used to designate group membership or to
define a group of signals with similar function (i.e. A[21:1], SR[4:1])
Set: When referring to registers, the term set means the bit is a logical 1.
Clear: When referring to registers, the term clear means the bit is a logical 0.
Block: A group of bits (or words) that erase simultaneously with one block erase instruction.
Main Block: A block that contains 32 Kwords.
Parameter Block: A block that contains 4 Kwords.
Hexadecimal prefix
Binary prefix
8 bits
16 bits
1024 words
1,048,576 words
1024 bits
1024 bytes
1,048,576 bits
1,048,576 bytes
Automatic Power Savings
Command User Interface
One Time Programmable
Protection Register
Protection Register Data
Protection Lock Register
Reserved for Future Use
Status Register
Status Register Data
Write State Machine
Intel
£
Advanced+ Boot Block Flash Memory (C3)
®
Advanced+ Boot Block Flash Memory
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