STM32F405RGT6 STMicroelectronics, STM32F405RGT6 Datasheet - Page 103

Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM

STM32F405RGT6

Manufacturer Part Number
STM32F405RGT6
Description
Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F405RGT6

Core
ARM Cortex M4
Processor Series
STM32F4
Data Bus Width
32 bit
Maximum Clock Frequency
168 MHz
Program Memory Size
1024 KB
Data Ram Size
192 KB
On-chip Adc
Yes
Number Of Programmable I/os
51
Number Of Timers
10
Operating Supply Voltage
1.7 V to 3.6 V
Package / Case
LQFP-64
Mounting Style
SMD/SMT
A/d Bit Size
12 bit
A/d Channels Available
16
Interface Type
CAN, I2C, I2S, SPI, UART
Program Memory Type
Flash
Lead Free Status / Rohs Status
 Details

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STM32F405xx, STM32F407xx
5.3.17
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, R
Unless otherwise specified, the parameters given in
performed under the ambient temperature and V
in
Table 47.
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
Figure 35. Recommended NRST pin protection
2. The reset network protects the device against parasitic resets.
3. The user must ensure that the level on the NRST pin can go below the V
V
V
V
T
V
V
Table
NF(NRST)
IH(NRST)
IL(NRST)
NRST_OUT
Symbol
F(NRST)
hys(NRST)
to the series resistance must be minimum
Table
R
PU
47. Otherwise the reset is not taken into account by the device.
11.
(1)
(1)
(1)
(1)
PU
NRST pin characteristics
(see
NRST Input low level voltage
NRST Input high level voltage
NRST Schmitt trigger voltage
hysteresis
Weak pull-up equivalent resistor
NRST Input filtered pulse
NRST Input not filtered pulse
Generated reset pulse duration
Table
44).
Parameter
Doc ID 022152 Rev 2
(~10% order)
(2)
.
Reset source
V
Conditions
DD
V
DD
Internal
IN
> 2.7 V
supply voltage conditions summarized
=
Table 47
V
SS
are derived from tests
IL(NRST)
–0.5
Min
300
30
20
2
-
-
Electrical characteristics
max level specified in
Typ
200
40
-
-
-
-
-
V
DD
Max
100
0.8
50
-
-
-
+0.5
103/167
Unit
mV
ns
ns
µs
V

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