C8051F317-GMR Silicon Laboratories Inc, C8051F317-GMR Datasheet - Page 36

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C8051F317-GMR

Manufacturer Part Number
C8051F317-GMR
Description
MCU 8-Bit C8051F31x 8051 CISC 16KB Flash 3.3V 24-Pin QFN EP T/R
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of C8051F317-GMR

Package
24QFN EP
Device Core
8051
Family Name
C8051F31x
Maximum Speed
25 MHz
Ram Size
1.25 KB
Program Memory Size
16 KB
Operating Supply Voltage
3.3 V
Data Bus Width
8 Bit
Program Memory Type
Flash
Number Of Programmable I/os
21
Interface Type
I2C/SMBus/SPI/UART
On-chip Adc
17-chx10-bit
Operating Temperature
-40 to 85 °C
Number Of Timers
4

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C8051F310/1/2/3/4/5/6/7
3.
36
–40°C to +85°C, 25 MHz System Clock unless otherwise specified.
Digital Supply Voltage
Digital Supply RAM Data Retention
Voltage
Specified Operating Temperature
Range
SYSCLK (system clock frequency)
Tsysl (SYSCLK low time)
Tsysh (SYSCLK high time)
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
I
I
Note 4)
I
Note 5)
Notes:
1. Given in Table 9.1 on page 110.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. Based on device characterization data, not production tested.
4. Active and Inactive I
5. I
6. Idle I
DD
DD
DD
(Note 3)
Supply Sensitivity (Note 3,
Frequency Sensitivity (Note 3,
using the I
7.8 mA typical at 3.0 V and f = 25 MHz. From this, I
3.3 V and f = 25 MHz.
quency sensitivity number for that range. When using these numbers to estimate I
the estimate should be the current at 25 MHz minus the difference in current indicated by the fre-
quency sensitivity number. For example: 
V
frequency sensitivity number for that range. When using these numbers to estimate Idle I
MHz, the estimate should be the current at 25 MHz minus the difference in current indicated by the
frequency sensitivity number. For example: 
V
DD
DD
DD
Global DC Electrical Characteristics
can be estimated for frequencies < 15 MHz by multiplying the frequency of interest by the fre-
= 3.0 V; F = 20 MHz, I
= 3.0 V; F = 5 MHz, Idle I
DD
Parameter
can be estimated for frequencies < 1 MHz by multiplying the frequency of interest by the
DD
Supply Sensitivity. For example, if the V
Table 3.1. Global DC Electrical Characteristics
DD
at voltages and frequencies other than those specified can be calculated
DD
DD
= 7.8 mA – (25 MHz – 20 MHz) x 0.21 mA/MHz = 6.75 mA.
V
V
V
V
= 4.8 mA – (25 MHz – 5 MHz) x 0.15 mA/MHz = 1.8 mA.
DD
DD
DD
DD
= 3.0 V, F < 15 MHz, T = 25 ºC
= 3.0 V, F > 15 MHz, T = 25 ºC
= 3.6 V, F < 15 MHz, T = 25 ºC
= 3.6 V, F > 15 MHz, T = 25 ºC
V
V
V
V
DD
DD
DD
DD
= 3.0 V, F = 25 MHz
= 3.6 V, F = 25 MHz
= 3.0 V, F = 80 kHz
= 3.0 V, F = 1 MHz
Conditions
F = 25 MHz
F = 1 MHz
Rev. 1.7
DD
DD
= 7.8 mA + 0.67 x (3.3 V – 3.0 V) = 8 mA at
is 3.3 V instead of 3.0 V at 25 MHz: I
V
Min
–40
RST
18
0
18
2
1
0.38
10.7
0.39
0.21
0.55
0.27
Typ
3.0
1.5
7.8
31
67
62
DD
for > 15 MHz,
Max
12.1
+85
3.6
8.6
25
DD
for > 1
mA/MHz
mA/MHz
mA/MHz
mA/MHz
DD
Units
MHz
%/V
%/V
mA
mA
mA
µA
°C
ns
ns
=
V
V

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