PMEG2005AELD NXP Semiconductors, PMEG2005AELD Datasheet - Page 7

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable

PMEG2005AELD

Manufacturer Part Number
PMEG2005AELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEG2005AELD
Product data sheet
Fig 7.
Fig 8.
P
F(AV)
(W)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
0.4
0.3
0.2
0.1
0.0
0.00
f = 1 MHz; T
T
Average forward power dissipation as a
function of average forward current; typical
values
Diode capacitance as a function of reverse voltage; typical values
j
= 150 °C
amb
(1)
0.25
= 25 °C
(2)
0.50
(pF)
(3)
C
d
30
20
10
0
I
F(AV)
0
All information provided in this document is subject to legal disclaimers.
006aac563
(A)
(4)
0.75
5
Rev. 1 — 10 May 2011
10
Fig 9.
20 V, 0.5 A low V
P
R(AV)
(W)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
1.5
1.0
0.5
0.0
15
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
j
V
006aac562
= 125 °C
R
(V)
2
20
PMEG2005AELD
F
MEGA Schottky barrier rectifier
4
6
(1)
(2)
(3)
© NXP B.V. 2011. All rights reserved.
8
006aac564
V
(4)
R
(V)
10
7 of 14

Related parts for PMEG2005AELD