BAV70_SER NXP Semiconductors, BAV70_SER Datasheet - Page 3

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BAV70_SER

Manufacturer Part Number
BAV70_SER
Description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
4. Marking
5. Limiting values
BAV70_SER_7
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Symbol
Per diode
V
V
I
I
I
F
FRM
FSM
RRM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Rev. 07 — 27 November 2007
Conditions
T
T
T
T
T
square wave
amb
s
s
s
amb
t
t
t
= 90 C
= 60 C
= 90 C
p
p
p
= 1 s
= 1 ms
= 1 s
Marking code
A4*
S4
A4*
A4
A4*
25 C
25 C
High-speed switching diodes
[1]
[1]
BAV70 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
100
100
215
150
250
150
175
450
500
450
500
500
4
1
0.5
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
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