BAV70_SER NXP Semiconductors, BAV70_SER Datasheet - Page 6

• Manufacturer Part Number: BAV70_SER
• Description: High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAV70_SER_7
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of reverse
(mA)
(1) T
(2) T
(3) T
(4) T
( A)
(1) T
(2) T
(3) T
(4) T
I
I
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
voltage; typical values
voltage; typical values
0.2
0
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
(1)
20
(2)
0.6
(1)
(2)
(3)
(4)
(3)
40
(4)
60
1.0
V
80
F
006aab107
006aab108
(V)
V
R
(V)
Rev. 07 — 27 November 2007
100
1.4
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
1
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAV70 series
8
2
10
12
© NXP B.V. 2007. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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