BAV70_SER NXP Semiconductors, BAV70_SER Datasheet - Page 5

• Manufacturer Part Number: BAV70_SER
• Description: High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BAV70_SER_7
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
d
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
p
300 s;
Rev. 07 — 27 November 2007
F
F
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
Conditions
I
I
I
I
V
V
V
V
V
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
j
= 150 C
= 150 C
High-speed switching diodes
[1]
[2]
[3]
BAV70 series
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
715
855
1
1.25
30
0.5
30
100
1.5
4
1.75
Unit
mV
mV
V
V
nA
pF
ns
V
5 of 15
A
A
A