LPC1820FET100 NXP Semiconductors, LPC1820FET100 Datasheet - Page 144

The LPC1820FET100 is a high-performance, cost-effective Cortex-M3 microcontroller featuring 168 kB of SRAM, and advanced peripherals including High Speed USB 2

LPC1820FET100

Manufacturer Part Number
LPC1820FET100
Description
The LPC1820FET100 is a high-performance, cost-effective Cortex-M3 microcontroller featuring 168 kB of SRAM, and advanced peripherals including High Speed USB 2
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
LPC1820FET100
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NXP Semiconductors
Table 32.
T
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10] V
[11] Allowed as long as the current limit does not exceed the maximum current allowed by the device.
[12] To V
LPC1850_30_20_10
Preliminary data sheet
Symbol
V
V
I
Oscillator pins
V
V
USB pins
V
V
LI
amb
hys
OL
i(XTAL1)
o(XTAL2)
IC
i(dif)
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
The RTC typically fails when V
V
Conditions <tbd>.
On pin VBAT; I
On pin VBAT; V
All internal pull-ups disabled. All pins configured as output and driven LOW. V
V
V
=
DD(REG)(3V3)
ps
DDA(3V3)
DD(IO)
corresponds to the output of the power switch (see
40
SS
.
supply voltage must be present.
Static characteristics
C to +85
= 3.3 V; T
= 3.3 V; T
16.2 Power consumption
DD(REG)(3V3)
Parameter
hysteresis voltage
LOW-level output
voltage
input leakage current
input voltage on pin
XTAL1
output voltage on pin
XTAL2
common-mode input
voltage
differential input voltage
BAT
= 3.3 V; T
amb
C, unless otherwise specified. Applies to LPC1850/30/20/10 Rev ‘-’ only.
Remark: All power consumption data in this section apply to Rev ‘-’ of the
LPC1850/30/20/10 parts only.
amb
= 25 C.
= <tbd> nA; V
= 25 C for all power consumption measurements. Applies to parts LPC1850/30/20/10 Rev ‘-’ only.
amb
BAT
= 25 C.
drops below 2.2 V and V
…continued
DD(REG)(3V3)
All information provided in this document is subject to legal disclaimers.
Conditions
I
V
V
high-speed mode
full-speed/low-speed
mode
chirp mode
OLS
I
I
= V
= 5 V
Rev. 3.1 — 15 December 2011
= <tbd> mA
DD(IO)
= 3.3 V; V
Figure
DD(REG)(3V3)
11) which is determined by the greater of V
BAT
< V
DD(REG)(3V3)
is less than 2.2 V.
DD(3V3)
[12]
; T
amb
32-bit ARM Cortex-M3 microcontroller
Min
-
-
-
-
0.5
0.5
<tbd>
<tbd>
<tbd>
<tbd>
= 3.3 V; T
LPC1850/30/20/10
= 25 C.
amb
= 25 C.
Typ
<tbd>
-
<tbd>
<tbd>
-
-
<tbd>
-
-
<tbd>
[1]
BAT
and V
© NXP B.V. 2011. All rights reserved.
Max
-
<tbd>
<tbd>
<tbd>
1.2
1.2
<tbd>
<tbd>
<tbd>
<tbd>
DD(Reg)(3V3)
144 of 157
.
Unit
V
V
A
A
V
V
mV
mV
mV
mV

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