BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 7

• Manufacturer Part Number: BUK7210-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK7210-55B_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
(A)
ID
100
75
50
25
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
Tj = 185 °C
…continued
4
Conditions
I
I
I
I
Figure 11
I
I
Figure 11
I
V
S
S
S
S
S
S
S
Tj = 25 °C
DS
= 18 A; V
= 18 A; V
= 18 A; V
= 18 A; V
= 18 A; V
= 18 A; V
= 20 A; dI
6
= 30 V; T
VGS (V)
003aac279
Rev. 01 — 11 December 2008
GS
GS
GS
GS
GS
GS
S
8
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
j
j
j
j
j
j
= 150 °C
= 175 °C
= 100 °C
= 25 °C; see
= 125 °C
= 185 °C; see
Fig 6.
R
(m Ω)
DSon
GS
18
16
14
12
10
8
6
= -10 V;
of gate-source voltage; typical values.
Drain-source on-state resistance as a function
5
N-channel TrenchMOS standard level FET
10
Min
-
-
-
-
-
-
-
-
BUK7210-55B
Typ
0.76
0.74
0.8
0.85
0.78
0.73
67
65
15
© NXP B.V. 2008. All rights reserved.
V
GS
003aac285
Max
-
-
-
1.2
-
-
-
-
(V)
20
Unit
V
V
V
V
V
V
ns
nC
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