BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7210-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7210-55B_1
Product data sheet
Fig 7.
Fig 9.
V
GS(th)
(V)
2.4
1.6
0.8
a
5
4
3
2
1
0
0
-60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
Normalized drain-source on-state resistance
10
10
80
80
max
typ
min
150
150
003aac282
003aac283
T j (°C)
T
j
(°C)
Rev. 01 — 11 December 2008
220
220
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
DSon
(mΩ )
(A)
I
10
10
10
10
10
10
D
25
20
15
10
−1
−2
−3
−4
−5
−6
5
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
N-channel TrenchMOS standard level FET
6
6.5 7
75
2
min
BUK7210-55B
150
8
Lable is V
typ
4
225
max
V
GS
© NXP B.V. 2008. All rights reserved.
10
GS
003aac276
(V)
I
D
(V)
(A)
03aa35
20
300
6
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