PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet
PHD38N02LT
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PHD38N02LT Summary of contents
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... PHD38N02LT N-channel TrenchMOS logic level FET Rev. 02 — 2 February 2007 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Low on-state resistance 1.3 Applications I Linear regulator for Double-Data Rate (DDR) memory 1 ...
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... T = 100 see Figure pulsed see see Figure pulsed Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET Version SOT428 Min Max - and 3 - 44.7 - 31.6 Figure 3 - 179 - 57.6 55 +175 ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHD38N02LT_2 Product data sheet 03aa16 I (%) 150 200 Fig 2. Normalized continuous drain current Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET 120 der 100 150 ------------------- - 100 % der I ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PHD38N02LT_2 Product data sheet N-channel TrenchMOS logic level FET Conditions Figure 4 minimum footprint SOT404 minimum footprint - Rev. 02 — 2 February 2007 PHD38N02LT Min Typ Max Unit - - 2.6 K K/W [1] - ...
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... DS GS see Figure 11 and MHz see Figure 5 see Figure Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET Min Typ Max and 10 0.5 1.0 1.5 0 1.8 - 0.05 1 500 - 10 ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab709 = (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET 2 DSon drain current; typical values ...
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... Fig 10. Sub-threshold drain current as a function of 003aab713 (nC) G Fig 12. Gate charge waveform definitions Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET min typ 0 0.4 0.8 1 gate-source voltage ...
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... PHD38N02LT_2 Product data sheet 003aab712 C (pF 0.9 1 Fig 14. Input, output and reverse transfer capacitances Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET MHz function of drain-source voltage; typical values ...
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... scale min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET min 10.4 2.95 0.5 2.285 4.57 9.6 2.55 EUROPEAN PROJECTION SOT428 max 0.9 0.2 0.2 0.5 ISSUE DATE ...
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... PHB38N02LT has been discontinued. PHB_PHD38N02LT-01 20030630 (9397 750 11614) PHD38N02LT_2 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data - Rev. 02 — 2 February 2007 PHD38N02LT Supersedes PHB_PHD38N02LT-01 - © NXP B.V. 2007. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 2 February 2007 PHD38N02LT N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 February 2007 Document identifier: PHD38N02LT_2 ...