PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 4

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4.
[1]
PHD38N02LT_2
Product data sheet
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
Mounted on a printed-circuit board; vertical in still air.
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
thermal resistance from junction to mounting base see
thermal resistance from junction to ambient
-5
0.2
0.1
0.05
0.02
Thermal characteristics
SOT428
= 0.5
single pulse
10
-4
Rev. 02 — 2 February 2007
10
-3
Conditions
minimum footprint
SOT404 minimum footprint
Figure 4
10
-2
N-channel TrenchMOS logic level FET
10
[1]
-1
PHD38N02LT
P
Min
-
-
-
t
p
T
t
p
Typ
-
75
50
© NXP B.V. 2007. All rights reserved.
(s)
003aab707
=
T
t
p
t
Max
2.6
-
-
1
4 of 12
Unit
K/W
K/W
K/W